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Highly reliable low-energy writing of bits in non-volatile multiferroic memory based on 180-degree magnetization switching with voltage-generated stress

机译：非易失性多铁性中高度可靠的低能量写入位基于电压产生的180度磁化切换的存储器强调

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Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha;
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年度 2014
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1. Complete magnetization reversal in a magnetostrictive nanomagnet with voltage-generated stress: A reliable energy-efficient non-volatile magneto-elastic memory [J] . Biswas Ayan K., Bandyopadhyay Supriyo, Atulasimha Jayasimha Applied Physics Letters . 2014,第7期

机译：具有电压产生应力的磁致伸缩纳米磁铁中的完全磁化反转：可靠的节能非挥发性磁弹性存储器
2. Complete magnetization reversal in a magnetostrictive nanomagnet with voltage-generated stress: A reliable energy-efficient non-volatile magneto-elastic memory [J] . Ayan K. Biswas, Supriyo Bandyopadhyay, Jayasimha Atulasimha Applied Physics Letters . 2014,第7期

机译：具有电压产生应力的磁致伸缩纳米磁铁中的完全磁化反转：可靠的节能非挥发性磁弹性存储器
3. Electric field-induced magnetization switching in interface-coupled multiferroic heterostructures: a highly-dense, non-volatile, and ultra-low-energy computing paradigm [J] . Kuntal Roy Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第25期

机译：界面耦合多铁异质结构中的电场感应磁化转换：一种高密度，非易失性和超低能量的计算范例
4. Electric-field-control of Non-volatile Magnetization Switching in Multiferroic CoFeB/(011)-PMN-PT Heterostructures [C] . Yuanjun Yang, Bin Hong, Mengmeng Yang, Chinese Materials Conference . 2016

机译：多体型COFEB /（011） - PMN-PT异质结构中非易失性磁化切换的电场控制
5. Spin-Orbit Torque Driven Magnetization Switching for Non-volatile Memory and Beyond [D] . Liu, Yang. 2020

机译：用于非易失性记忆及超越的旋转轨道扭矩驱动磁化切换
6. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable non-volatile non-toggle extremely low energy straintronic memory [O] . Hasnain Ahmad, Jayasimha Atulasimha, Supriyo Bandyopadhyay -1

机译：FeGa纳米磁体中应变引起的可逆磁化转换：通往可重写非易失性非触发极低能量应变电子存储器的途径
7. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory [O] . Ahmad Hasnain, Atulasimha Jayasimha, Bandyopadhyay Supriyo 2015

机译：FeGa纳米磁体中应变引起的可逆磁化转换：通向可重写，非易失性，非触发，极低能量的应变电子存储器的途径
8. Novel Non-Volatile Memory Devices Based on Magnetic Semiconductor Nanostructures for Terabit Integration [R] . Kim, K. W. 2010

机译：基于磁性半导体纳米结构的新型非易失性存储器件用于太比特集成

Highly reliable low-energy writing of bits in non-volatile multiferroic memory based on 180-degree magnetization switching with voltage-generated stress

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